Concept Demonstration of Dopant Selective Reactive Etching in Silicon Carbide
Discipline Area:
Measurement Technology
Principal Investigator:
Organization:
NASA Glenn Research Center
Program:
Seedling
Round:
3
Phase:
Phase II
Period of Performance:
May 1 2014 to Oct 31 2015
Co-Investigators:
Robert Shinavski (Rolls-Royce)
Ender Savrun (Sienna Technologies)
Laura Evans (GRC)
Presentation Video: