Project

Concept Demonstration of Dopant Selective Reactive Etching in Silicon Carbide

Discipline Area: 
Measurement Technology
Principal Investigator: 
Organization: 
NASA Glenn Research Center
Program: 
Seedling
Round: 
3
Phase: 
Phase II
Period of Performance: 
May 1 2014 to Oct 31 2015
Co-Investigators: 
Robert Shinavski (Rolls-Royce)
Ender Savrun (Sienna Technologies)
Laura Evans (GRC)
Presentation Video: 
http://ac.arc.nasa.gov/p2c0ccqu8bm/
Phase I: 
Concept Demonstration of Dopant Selective Reactive Etching in Silicon Carbide

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