Project

Concept Demonstration of Dopant Selective Reactive Etching in Silicon Carbide

Discipline Area: 
Measurement Technology
Principal Investigator: 
Organization: 
NASA Glenn Research Center
Program: 
Seedling
Round: 
3
Phase: 
Phase II
Period of Performance: 
May 1 2014 to Oct 31 2015
Co-Investigators: 
Robert Shinavski (Rolls-Royce)
Ender Savrun (Sienna Technologies)
Laura Evans (GRC)

to top